Prospective technology for system-on-a-chip: N2 implant followed by VHP O2 reoxidation

Tien-Ying Luo; Husam N. Al-Shareef; George A. Brown; Victor H. C. Watt; Arun Karamcheti; Mike D. Jackson; Howard R. Huff; Bob Evans; Chongmok Lee; Hong-Fa Luan; Dim-Lee Kwong

doi:10.1117/12.395738

18 August 2000 Prospective technology for system-on-a-chip: N₂ implant followed by VHP O₂ reoxidation

Tien-Ying Luo, Husam N. Al-Shareef, George A. Brown, Victor H. C. Watt, Arun Karamcheti, Mike D. Jackson, Howard R. Huff, Bob Evans, Chongmok Lee, Hong-Fa Luan, Dim-Lee Kwong

Author Affiliations +

Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395738
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

A novel technique - N₂ ion implant followed by vertical high pressure O₂ re-oxidation in a furnace, capable of growing oxides of multiple thickness is presented. It is observed that the oxidation rate can be well modulated by varying the N₂ I/I dose, and VHP O₂ re-oxidation provides enhanced oxide growth rate and controls the nitrogen profile in the film, as compared to RTO or furnace O₂ re-oxidation. Therefore, more than 500 percent differential oxide growth rate can be realized by using N₂ I/I and VHP O₂ re-oxidation. In addition, post-implant RTA N₂ anneal is found to improve the channel carrier and alter the flat-band and threshold voltages without increasing the oxide thickness.

Citation Download Citation

Tien-Ying Luo, Husam N. Al-Shareef, George A. Brown, Victor H. C. Watt, Arun Karamcheti, Mike D. Jackson, Howard R. Huff, Bob Evans, Chongmok Lee, Hong-Fa Luan, and Dim-Lee Kwong "Prospective technology for system-on-a-chip: N₂ implant followed by VHP O₂ reoxidation", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395738

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