Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

Etching 200-mm diameter SCALPEL masks with the ASE process

[+] Author Affiliations
Ian R. Johnston, Huma Ashraf, Jy K. Bhardwaj, Janet Hopkins, Alan M. Hynes, Glenn Nicholls, Serrita A. McAuley, Stephen Hall, Lilian Atabo

Surface Technology Systems Ltd. (United Kingdom)

Gregory R. Bogart, Avi Kornblit, Anthony E. Novembre

Lucent Technologies/Bell Labs. (USA)

Proc. SPIE 3997, Emerging Lithographic Technologies IV, 184 (July 21, 2000); doi:10.1117/12.390054
Text Size: A A A
From Conference Volume 3997

  • Emerging Lithographic Technologies IV
  • Elizabeth A. Dobisz
  • Santa Clara, CA | February 27, 2000

abstract

The Advanced Silicon Etch (ASER) process has been used for silicon substrate etching for the manufacture of SCALPELR (SCattering using Angular Limitation Projection E-beam Lithography) masks. The current SCALPELR mask fabrication process uses an aqueous solution of KOH to etch the membrane support struts in 100 mm diameter, <100> crystalline silicon wafers. This technique is undesirable for the manufacture of large diameter masks with thicker substrates, as it limits the maximum printable die size. Inductively coupled plasma (ICP) etching, using the ASER process, provides the only alternative etch technique. This gives support struts with vertical profiles, yielding a higher printable area than with wet etching, and is ideal for etching the substrates of large diameter masks. In addition to this, and to the benefits of dry over wet etching, the ASER process allows the use of wafers of any crystal orientation and gives greater flexibility in pattern placement and geometry. This paper presents process optimization data based on 200 mm diameter wafers, using a system designed specifically for this application. The key aspects of this work have focused on etch rate, CD control and uniformity enhancement. Etch rate determines the economic feasibility of this approach, particularly with etch depths of approximately 750 micrometer. Uniform etching is required to minimize the time to clear the membranes, and the CD tolerances must be met so that structural integrity is maintained. The large exposed silicon areas, (> 40% global and > 80% local), the macro loading effects caused by the edge of the pattern, and the need for near vertical strut profile, make these requirements more difficult to achieve. Etch rate and uniformity achieved, exceed the minimum specification of > 2 micrometer/min and < +/- 6% respectively.

© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Ian R. Johnston ; Huma Ashraf ; Jy K. Bhardwaj ; Janet Hopkins ; Alan M. Hynes, et al.
"Etching 200-mm diameter SCALPEL masks with the ASE process", Proc. SPIE 3997, Emerging Lithographic Technologies IV, 184 (July 21, 2000); doi:10.1117/12.390054; http://dx.doi.org/10.1117/12.390054


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.