Stress reduction of molybdenum/silicon multilayers deposited by ion-beam sputtering

Masayuki Shiraishi; Wakana Ishiyama; Tetsuya Oshino; Katsuhiko Murakami

doi:10.1117/12.390102

21 July 2000 Stress reduction of molybdenum/silicon multilayers deposited by ion-beam sputtering

Masayuki Shiraishi, Wakana Ishiyama, Tetsuya Oshino, Katsuhiko Murakami

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390102
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Modified molybdenum/silicon (Mo/Si) multilayers were deposited by ion beam sputtering (IBS). We obtained low-stress multilayers by sub-multilayering each Mo-layer into a trilayer of Mo/Ru (ruthenium)/Mo, and argon (Ar) ion beam polishing (IBP) after each Mo-layer deposition. Conventional Mo/Si multilayers have compressive stress of about -450 MPa, while the low-stress multilayers which we have developed have tensile stress of +14 MPa, on average. The method used is not a heating process such as annealing, thus it does not cause irreversible deformation of the precisely-figured mirror substrates of optics. It is expected that the application of low-stress multilayers to mirrors for reflection of light with a wavelength of 13 nm will make it possible to compose optics without worsening optical properties due to deformation of substrates by the stress of multilayer coatings.

Citation Download Citation

Masayuki Shiraishi, Wakana Ishiyama, Tetsuya Oshino, and Katsuhiko Murakami "Stress reduction of molybdenum/silicon multilayers deposited by ion-beam sputtering", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390102

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