Laser induced chemical vapor deposition (LCVD) of silicon nitride and silicon dioxide single and double layers have been investigated using excimer laser operating at a wavelength of 193 nm. The composition of silicon nitride which was formed in SiH4/NH3 gas mixture was nearly stochiometric having a refractive index of 1.8 - 1.9 and contained small amount of hydrogen. Deposition of silicon dioxide was investigated using SiH4/N2O. Using this gas mixture the film composition depended strongly upon the SiH4/N2O ratio. At high ratio the film formed was silicon oxynitride, which contained both Si-N and Si-O bonds. The film also contained small amount of Si-H bonds. Decreasing SiH4/N2O ratio led to the formalin of pure silicon dioxide with a refractive index of 1.45. A double layer coating of both silicon nitride and silicon dioxide resulted in the formation of antireflection coating with a reflectivity of about 0.5% at 750 nm.© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.