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12 December 1997 Theory study for the energy gap change in a semiconductor induced by an intense laser pulse
Zhonghua Shen, Jian Lu, Xiao-Wu Ni
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Proceedings Volume 3173, Ultrahigh- and High-Speed Photography and Image-based Motion Measurement; (1997) https://doi.org/10.1117/12.294511
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States
Abstract
In this paper, by solving the equation for the density of the nonequilibrium carriers (NEC), taking into account laser generation, the linear and auger recombination and diffusion, we have obtained the excited electron-hole plasma density. A model is developed to calculate the effect of the plasma on the gap between the conduction band and valence band.
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Zhonghua Shen, Jian Lu, and Xiao-Wu Ni "Theory study for the energy gap change in a semiconductor induced by an intense laser pulse", Proc. SPIE 3173, Ultrahigh- and High-Speed Photography and Image-based Motion Measurement, (12 December 1997); https://doi.org/10.1117/12.294511
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KEYWORDS
Pulsed laser operation
Semiconductor lasers
Semiconductors
Plasma
Diffusion
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