Pyroelectric IR sensor based on oxide heterostructures on Si(100) and LaAlO3(100) substrates

Naijuan Wu; Y. S. Chen; S. Dordevic; Alex Ignatiev

doi:10.1117/12.300682

20 February 1998 Pyroelectric IR sensor based on oxide heterostructures on Si(100) and LaAlO3(100) substrates

Naijuan Wu, Y. S. Chen, S. Dordevic, Alex Ignatiev

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300682
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

Uncooled infrared detectors consisting of thin film pyroelectric oxide heterostructures have been fabricated. Pb(Zr,Ti)O₃ (PZT) and (Sr,Ba)Nb₂O₆ (BSN) thin films were integrated to YBa₂Cu₃O_7-x (YBCO) films on yttria-stabilized zirconia (YSZ)-buffered Si(100) and on LaAlO₃(100) substrates by the pulsed laser deposition technique. The YBCO thin films are used both as IR reflector- conductive electrodes and as atomic templates for PZT and BSN epitaxial growth, but not necessarily for their superconducting properties. The crystalline properties and photoresponse of the oxide thin film heterostructure infrared detectors were characterized from room temperature up to the phase transition temperatures of PZT and BSN. Detectivity values of approximately 10⁸ cmHz^1/2/W at room temperature have been obtained for simple heterostructure device configurations. The tunable phase transition temperature, dielectric constant and pyroelectric properties of the oxide allow for the development of an infrared detector with operation at temperatures higher than room temperature.

Citation Download Citation

Naijuan Wu, Y. S. Chen, S. Dordevic, and Alex Ignatiev "Pyroelectric IR sensor based on oxide heterostructures on Si(100) and LaAlO3(100) substrates", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300682

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