Process monitoring of ultrathin oxides using surface charge analysis

Alan H. Field

doi:10.1117/12.284682

2 September 1997 Process monitoring of ultrathin oxides using surface charge analysis

Alan H. Field

Proceedings Volume 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing; (1997) https://doi.org/10.1117/12.284682
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

Oxide process monitoring for process deviations and contamination is essential for achieving high performance and yield in advanced integrated circuits. Moreover, monitoring techniques must be able to frequently measure actual production-critical films to minimize the cost of monitoring and to minimize the product at risk. A methodology and experimental results for qualifying a surface charge analyzer (SCA) for in-line monitoring of ultrathin oxides (less than 30 angstroms) are presented. The SCA provides rapid measurements of total oxide charge, density of interface traps, minority carrier recombination lifetime and doping concentration with sensitivities that are independent of oxide thickness. Process deviations in anneal, pre-clean, oxidation recipe and wafer substrate, were intentionally introduced on sample wafers. All wafers with intentional process deviations were detected by the SCA. Process tolerance and SCA precision were also estimated. The SCA meets the requirements for an in-line process monitor by performing rapid, repeatable and cost effective measurements on ultrathin oxide production recipes.

Citation Download Citation

Alan H. Field "Process monitoring of ultrathin oxides using surface charge analysis", Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); https://doi.org/10.1117/12.284682

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