Tristimulus color sensitive photodetector in a BiCMOS technology

Mohamed Ben Chouikha; Guo Neng Lu; Mohamed Sedjil; Gerard Sou; George Alquie

doi:10.1117/12.284567

2 September 1997 Tristimulus color-sensitive photodetector in a BiCMOS technology

Mohamed Ben Chouikha, Guo Neng Lu, Mohamed Sedjil, Gerard Sou, George Alquie

Proceedings Volume 3226, Microelectronic Structures and MEMS for Optical Processing III; (1997) https://doi.org/10.1117/12.284567
Event: Micromachining and Microfabrication, 1997, Austin, TX, United States

Abstract

A tristimulus color sensitive photo-detector consisting of three buried p-n junctions, implemented in a BiCMOS technology is presented. The three buried junctions give three band-pass- like spectral responses, which peak respectively in the blue, green and red areas. Simulated results obtained with a 1-D analytic model fit well the experimental curves obtained by measuring the sensing arrays in the test chip, designed and fabricated in a 1.2 micrometer BiCMOS process. The colorimetric characterization of the device is performed. A mean color difference of 2.15 is obtained.

Citation Download Citation

Mohamed Ben Chouikha, Guo Neng Lu, Mohamed Sedjil, Gerard Sou, and George Alquie "Tristimulus color-sensitive photodetector in a BiCMOS technology", Proc. SPIE 3226, Microelectronic Structures and MEMS for Optical Processing III, (2 September 1997); https://doi.org/10.1117/12.284567

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