Buried double p-n junction structure using a CMOS process for wavelength detection

Guo Neng Lu; Mohamed Ben Chouikha; Mohamed Sedjil; Gerard Sou; George Alquie; Serge Rigo

doi:10.1117/12.284570

2 September 1997 Buried double p-n junction structure using a CMOS process for wavelength detection

Guo Neng Lu, Mohamed Ben Chouikha, Mohamed Sedjil, Gerard Sou, George Alquie, Serge Rigo

Proceedings Volume 3226, Microelectronic Structures and MEMS for Optical Processing III; (1997) https://doi.org/10.1117/12.284570
Event: Micromachining and Microfabrication, 1997, Austin, TX, United States

Abstract

Buried double p-n junction (BDJ) structure designed and fabricated in a standard CMOS process is presented. Under reverse-biasing conditions, it provides two measurable photo- generated junction currents I₁ and I₂, which have a linear dependence on the incident photon flux. Over the visible range, the ratio I₂/I₁ is a monotone- increasing function of the wavelength, which can serve as a reference curve for wavelength determination. The reference curve r((lambda) ) can be obtained by measurement or by calculation. A physically-based model is suggested for the simulation of photocurrents and the computation of the curve r((lambda) ). Two application examples of the BDJ detector are presented. For the development of microspectrophotometry, replacing photodiodes by BDJ detectors offers a solution to problems of wavelength calibration. In the case of colorimetric pH measurement, the BDJ detector is used to detect spectral changes of absorption.

Citation Download Citation

Guo Neng Lu, Mohamed Ben Chouikha, Mohamed Sedjil, Gerard Sou, George Alquie, and Serge Rigo "Buried double p-n junction structure using a CMOS process for wavelength detection", Proc. SPIE 3226, Microelectronic Structures and MEMS for Optical Processing III, (2 September 1997); https://doi.org/10.1117/12.284570

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