Ensemble Monte Carlo simulations of ultrafast phenomena in semiconductors

David K. Ferry; Stephen M. Goodnick

doi:10.1117/12.306149

23 April 1998 Ensemble Monte Carlo simulations of ultrafast phenomena in semiconductors

David K. Ferry, Stephen M. Goodnick

Proceedings Volume 3277, Ultrafast Phenomena in Semiconductors II; (1998) https://doi.org/10.1117/12.306149
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Monte Carlo simulation has been shown to be an effective approach to the study of ultrafast carrier relaxation in semiconductor bulk materials and in microstructures. We review the use of this methodology to study electron-electron and electron-hole interactions, non-equilibrium and confined phonons, and inter-subband relaxation in quantum wells. We also discuss the presence of the collision-duration on the short-time scale, and review the work of some other workers in the field. Finally, we discuss some of the limitations of the Monte Carlo technique.

Citation Download Citation

David K. Ferry and Stephen M. Goodnick "Ensemble Monte Carlo simulations of ultrafast phenomena in semiconductors", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306149

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