Material characterization for III-nitride-based light emitters

Michael Kneissl; David P. Bour; Linda T. Romano; Brent S. Krusor; Matt D. McCluskey; Werner Goetz; Noble M. Johnson

doi:10.1117/12.304411

7 April 1998 Material characterization for III-nitride-based light emitters

Michael Kneissl, David P. Bour, Linda T. Romano, Brent S. Krusor, Matt D. McCluskey, Werner Goetz, Noble M. Johnson

Proceedings Volume 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II; (1998) https://doi.org/10.1117/12.304411
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

A review is presented of the electrical and optical properties of nitride based optoelectronic devices, in particular AlGaInN light emitting diodes and laser diode structures. The III-nitride films and devices were grown by organometallic vapor-phase epitaxy on c- and a-face sapphire substrates. We will discuss the structural properties of GaN. InGaN and AlGaN films, heterostructures and InGaN/GaN quantum wells using x-ray diffraction and cross-sectional transmission electron microscope and describe their electrical and optical properties characterized by Hall effect, photoluminescence, and electroluminescence measurements.

Citation Download Citation

Michael Kneissl, David P. Bour, Linda T. Romano, Brent S. Krusor, Matt D. McCluskey, Werner Goetz, and Noble M. Johnson "Material characterization for III-nitride-based light emitters", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); https://doi.org/10.1117/12.304411

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