Paper
7 July 1998 Effect of carrier dynamics on quantum-dot laser performance and the possibility of bi-exciton lasing
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Abstract
The purpose of this work is to study the effect of carrier dynamics on quantum-dot laser performance and to clarify how the carrier relaxation lifetime and the bi-exciton effect manifest themselves in the quantum-dot laser operation. We derive carrier-photon rate equations for quantum-dot lasers and simulate the output power vs. injected current relationship and the small-signal modulation response. We clarify criteria on the carrier relaxation lifetime as well as the inhomogeneous broadening linewidth, the dot density and the crystal quality to achieve high-performance. Then, we develop an optical gain formula for the bi-exciton- exciton transition and modify rate equations to describe bi- exciton lasing in quantum dots. We show spontaneous emission and lasing properties of bi-excitons, and discuss the effect of carrier relaxation lifetime and oscillator strength on the laser operations.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mitsuru Sugawara "Effect of carrier dynamics on quantum-dot laser performance and the possibility of bi-exciton lasing", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316640
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Cited by 10 scholarly publications.
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KEYWORDS
Quantum dots

Excitons

Quantum wells

Oscillators

Picosecond phenomena

Electrons

Modulation

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