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Proceedings Article

Effect of carrier dynamics on quantum-dot laser performance and the possibility of bi-exciton lasing

[+] Author Affiliations
Mitsuru Sugawara

Fujitsu Labs. Ltd. (Japan)

Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, 88 (July 7, 1998); doi:10.1117/12.316640
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From Conference Volume 3283

  • Physics and Simulation of Optoelectronic Devices VI
  • Marek Osinski; Peter Blood; Akira Ishibashi
  • San Jose, CA | January 24, 1998

abstract

The purpose of this work is to study the effect of carrier dynamics on quantum-dot laser performance and to clarify how the carrier relaxation lifetime and the bi-exciton effect manifest themselves in the quantum-dot laser operation. We derive carrier-photon rate equations for quantum-dot lasers and simulate the output power vs. injected current relationship and the small-signal modulation response. We clarify criteria on the carrier relaxation lifetime as well as the inhomogeneous broadening linewidth, the dot density and the crystal quality to achieve high-performance. Then, we develop an optical gain formula for the bi-exciton- exciton transition and modify rate equations to describe bi- exciton lasing in quantum dots. We show spontaneous emission and lasing properties of bi-excitons, and discuss the effect of carrier relaxation lifetime and oscillator strength on the laser operations.

© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Mitsuru Sugawara
"Effect of carrier dynamics on quantum-dot laser performance and the possibility of bi-exciton lasing", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, 88 (July 7, 1998); doi:10.1117/12.316640; http://dx.doi.org/10.1117/12.316640


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