InGaN/GaN lasers grown on SiC

Kathy Doverspike; Gary E. Bulman; S. T. Sheppard; Hua-Shuang Kong; Michelle T. Leonard; Heidi Dieringer; John A. Edmond; K. L. More; Y. K. Song; M. Kuball; Arto V. Nurmikko

doi:10.1117/12.304434

7 April 1998 InGaN/GaN lasers grown on SiC

Kathy Doverspike, Gary E. Bulman, S. T. Sheppard, Hua-Shuang Kong, Michelle T. Leonard, Heidi Dieringer, John A. Edmond, K. L. More, Y. K. Song, M. Kuball, Arto V. Nurmikko

Author Affiliations +

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304434
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Single crystal thin films with compositions from the AlN-InN- GaN system were grown via metal-organic chemical vapor deposition (MOCVD) on single crystal 6H-SiC substrates. Blue light emitting (LED) and laser diode (LD) structures were fabricated. A conducting buffer layer was developed which uses an AlGaN buffer layer which provides a conduction path between SiC and the active device region. This conducting buffer layer was utilized in both the LEDs and the LDs. The external quantum efficiency of the LEDs was 3% at 20 mA (3.6V) with a peak emission wavelength of 430 nm. Violet and blue LDs were fabricated which consisted of an 8-well InGaN/GaN multiple quantum well (MQW) active region in a separate confinement heterostructure (SCH) design. The devices lased at room temperature under pulsed and continuous wave operation with an emission wavelength of 404-435 nm. The lowest pulsed operation threshold current density obtained for lasing under was 10.4 kA/cm².

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Kathy Doverspike, Gary E. Bulman, S. T. Sheppard, Hua-Shuang Kong, Michelle T. Leonard, Heidi Dieringer, John A. Edmond, K. L. More, Y. K. Song, M. Kuball, and Arto V. Nurmikko "InGaN/GaN lasers grown on SiC", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304434

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