MBE-codeposited iridium silicide films on Si(100) and Si(111)

Davis Alan Lange; Gary A. Gibson; Charles M. Falco

doi:10.1117/12.164951

7 December 1993 MBE-codeposited iridium silicide films on Si(100) and Si(111)

Davis Alan Lange, Gary A. Gibson, Charles M. Falco

Proceedings Volume 2021, Growth and Characterization of Materials for Infrared Detectors; (1993) https://doi.org/10.1117/12.164951
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

We used molecular beam epitaxy to codeposit IrSi₃ films on p-type Si(111) and Si(100) substrates at elevated temperatures. Seemann-Bohlin x-ray diffraction reveals the formation of IrSi₃ at temperatures as low as 450 degree(s)C. We find that the growth of 100 angstroms IrSi₃ films on Si(111) and Si(100) substrates is similar to that of 450 angstroms IrSi₃ samples. Using low-energy electron diffraction, Bragg-Brentano x-ray, and transmission electron microscope (TEM) diffraction we identify a previously unreported c-axis oriented growth mode for IrSi₃ films deposited around 700 degree(s)C on Si(111) substrates. Indexing of TEM diffraction patterns suggests that the lattice constants for IrSi₃ in these thin films are the same as values derived for bulk IrSi₃ by other researchers. Atomic force microscopy and TEM images show the formation of continuous 100 angstroms IrSi₃ films at temperatures as high as 630 degree(s)C on Si(100) substrates and the formation of epitaxial IrSi₃ islands for temperatures above 670 degree(s)C on Si(111).

Citation Download Citation

Davis Alan Lange, Gary A. Gibson, and Charles M. Falco "MBE-codeposited iridium silicide films on Si(100) and Si(111)", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); https://doi.org/10.1117/12.164951

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