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Proceedings Article

Modeling and estimation of FPN components in CMOS image sensors

[+] Author Affiliations
Abbas El Gamal, Boyd A. Fowler, Xinqiao Liu

Stanford Univ. (USA)

Hao Min

Fudan Univ. (China) (USA)

Proc. SPIE 3301, Solid State Sensor Arrays: Development and Applications II, 168 (April 1, 1998); doi:10.1117/12.304560
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From Conference Volume 3301

  • Solid State Sensor Arrays: Development and Applications II
  • Morley M. Blouke
  • San Jose, CA | January 24, 1998

abstract

Fixed pattern noise (FPN) for a CCD sensor is modeled as a sample of a spatial white noise process. This model is, however, not adequate for characterizing FPN in CMOS sensors, since the redout circuitry of CMOS sensors and CCDs are very different. The paper presents a model for CMOS FPN as the sum of two components: a column and a pixel component. Each component is modeled by a first order isotropic autoregressive random process, and each component. Each component is modeled by a first order isotropic autoregressive random process, and each component is assumed to be uncorrelated with the other. The parameters of the processes characterize each component of the FPN and the correlations between neighboring pixels and neighboring columns for a batch of sensor. We show how to estimate the model parameters from a set of measurements, and report estimates for 64 X 64 passive pixel sensor (PPS) and active pixel sensor (APS) test structures implemented in a 0.35 micron CMOS process. High spatial correlations between pixel components were measured for the PPS structures, and between the column components in both PPS and APS. The APS pixel components were uncorrelated.

© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Abbas El Gamal ; Boyd A. Fowler ; Hao Min and Xinqiao Liu
"Modeling and estimation of FPN components in CMOS image sensors", Proc. SPIE 3301, Solid State Sensor Arrays: Development and Applications II, 168 (April 1, 1998); doi:10.1117/12.304560; http://dx.doi.org/10.1117/12.304560


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