Novel diazonaphthoquinone photoactive compound for G-line/I-line compatible positive photoresist

Shiro Tan; Shinji Sakaguchi; Kazuya Uenishi; Yasumasa Kawabe; Tadayoshi Kokubo; Rodney J. Hurditch

doi:10.1117/12.20131

1 June 1990 Novel diazonaphthoquinone photoactive compound for G-line/I-line compatible positive photoresist

Shiro Tan, Shinji Sakaguchi, Kazuya Uenishi, Yasumasa Kawabe, Tadayoshi Kokubo, Rodney J. Hurditch

Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20131
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

A photoactive compound (PAC) based on diazonaphthoquinone (DNQ) -5-sulfonyl ester of a novel ballast group (backbone) , which provides compatibility for both g- and i-line exposures is described . The PAC structure was designed to minimize the background absorption at 365 nm due to the backbone moiety, and further to enable a resist formulation to be optimized with lowered PAC loading for the reduction in A and B parameter values. Model PACs having different structural parameters were investigated by DRM and lithographic evaluations. The results indicated desirable PAC structures of lower absorption which provided the additional benefits of higher contrast and photospeed. The following structural parameters were found to contribute positively to these. (1) higher DNQ substitution level of backbone compounds, (2) an introduc-' tion of hydrophobic moiety into the backbone, (3) higher functionality of the backbone (number of the hydroxy groups capable of DNQ substitution) . A backbone compound for the , polyhydroxyspirobiindane was found to fulfil 1 the above requirements. A resist formulated with the PAC based on this backbone exhibited excellent resolution with near vertical profiles when imaged on high NA g- and i-l me steppers.

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Shiro Tan, Shinji Sakaguchi, Kazuya Uenishi, Yasumasa Kawabe, Tadayoshi Kokubo, and Rodney J. Hurditch "Novel diazonaphthoquinone photoactive compound for G-line/I-line compatible positive photoresist", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20131

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