Top-surface imaging resists for EUV lithography

Craig C. Henderson; David R. Wheeler; Tim P. Pollagi; Donna J. O'Connell; John E. M. Goldsmith; Aaron Fisher; Gregory Frank Cardinale; John M. Hutchinson; Veena Rao

doi:10.1117/12.309590

5 June 1998 Top-surface imaging resists for EUV lithography

Craig C. Henderson, David R. Wheeler, Tim P. Pollagi, Donna J. O'Connell, John E. M. Goldsmith, Aaron Fisher, Gregory Frank Cardinale, John M. Hutchinson, Veena Rao

Author Affiliations +

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309590
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The strong attenuation of extreme UV (EUV) radiation by organic materials necessities the use of a thin layer imaging (TLI) process for EUV lithography. Several TLI processes have been identified for potential use for EUVL, and the common theme in these approaches is the transfer of the aerial image to a thin layer of refractory-containing material, which is then used as a dry O₂ etch mask during a subsequent pattern transfer to the device layer. One TLI process that has been extensively examined for EUVL is the silylated top-surface imaging (TSI) technology, which is discussed in this paper. Using a new disilane silylation reagent, dimethylaminodimethyldisilane (DMDS) and 13.4 nm exposure, the TSI process has been sued to print 100 nm lines and spaces at equal pitch and 70 nm lines and spaces at a higher 1:2 pitch. The line edge roughness for the printed lines has been determined using a custom image analysis program and, as expected, varies with the particular EUV exposure system and numerical aperture. Exposures done with 193 nm lithography and the TSI process using DMDS are also shown for comparison to the EUV results.

Citation Download Citation

Craig C. Henderson, David R. Wheeler, Tim P. Pollagi, Donna J. O'Connell, John E. M. Goldsmith, Aaron Fisher, Gregory Frank Cardinale, John M. Hutchinson, and Veena Rao "Top-surface imaging resists for EUV lithography", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309590

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