Chemically Amplified Resists (CARs) are much less observable than their i-line counterparts due to the absence of photoresist actinic absorbency. CARs however, exhibit resist thinning during the Post-Exposure Bake process (PEB). A Design of Experiments (DOE) technique was employed around the exposure and the PEB temperature for a commercial DUV photoresist. A Fourier Transform Infrared (FTIR) technique was used to measure the deprotection of the CARs after the PEB step while standard interferometry techniques were used for exposed area thickness loss measurements after the PEB step. Our analysis indicates that exposed area thickness loss is strongly correlated to the deprotection of the photoresist, so that thickness loss can serve as a reliable deprotection indicator and can hence be possibly used as an observable for control of the photolithography sequence.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.