Paper
1 August 1990 Simulation of ultrafast carrier processes in pulse/probe and dual pulse correlation probing of InGaAs-type narrow band gap semiconductors
James E. Bair, J. Peter Krusius
Author Affiliations +
Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20717
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
An ensemble Monte Carlo technique has been developed for the simulation of optical pulse-and-probe and dual pulse correlation experiments with tunable laser sources in InGaAs thin films lattice matched to InP. Electrons and holes, and all scattering mechanisms, including carrier-carrier scattering, have been included. The time evolution of electron and hole distributions, and optical absorption have been simulated. Results are correlated with measured data from the research group of C. Pollock at this conference. It was found that inhomogeneity effects and heavy and light holes are necessary for good agreement with experimental data. Finally the extraction of time constants from measurements is a1dresset
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James E. Bair and J. Peter Krusius "Simulation of ultrafast carrier processes in pulse/probe and dual pulse correlation probing of InGaAs-type narrow band gap semiconductors", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); https://doi.org/10.1117/12.20717
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KEYWORDS
Scattering

Electrons

Monte Carlo methods

Plasma

Phonons

Absorption

Laser scattering

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