Two-step ablation for CVD SiO2 film by ArF excimer laser

Yuko Seki

doi:10.1117/12.321537

14 September 1998 Two-step ablation for CVD SiO₂ film by ArF excimer laser

Yuko Seki

Proceedings Volume 3343, High-Power Laser Ablation; (1998) https://doi.org/10.1117/12.321537
Event: High-Power Laser Ablation, 1998, Santa Fe, NM, United States

Abstract

In LSI restructuring systems which use lasers, via-hole formations are conducted by using laser ablation. In transparent films it is difficult to make a hole without causing damages on underlying interconnections, because laser ablation using visible wavelengths overheats the underlying metals. This paper propose two-step ablation method for transparent films, that is consist of absorption layer formation process and ablation process. Ablations of SiO₂ on aluminum interconnections were achieved using this two-step ablation process, without damage appeared as thermal expansion or resistance increase.

Citation Download Citation

Yuko Seki "Two-step ablation for CVD SiO₂ film by ArF excimer laser", Proc. SPIE 3343, High-Power Laser Ablation, (14 September 1998); https://doi.org/10.1117/12.321537

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