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Proceedings Article

Monitoring the aging of high-power laser diode arrays

[+] Author Affiliations
Jens W. Tomm, A. Baerwolff, Christoph Lienau, Alexander Richter, A. Jaeger

Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)

J. Donecker, A. Gerhardt

Institut fuer Kristallzuechtung (Germany)

Franz X. Daiminger

Jenoptik Laserdiode GmbH (Germany)

Stefan Heinemann

Jenoptik Laserdiode GmbH (USA)

Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, 2 (April 20, 1998); doi:10.1117/12.306188
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From Conference Volume 3359

  • Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
  • Sergey V. Svechnikov; Mikhail Y. Valakh
  • Kiev, Ukraine | May 13, 1997

abstract

Different diagnostic methods were investigated in order to evaluate their potential as aging sensitive tool for the analysis of high-power laser diode arrays. The well-known method of photocurrent spectroscopy, i.e. the measurement of the spectral sensitivity of a laser diode acting as a detector, was found to monitor aging properties of high power laser diode arrays in a convenient way. Photocurrent spectra of high power laser diode arrays emitting at 808 nm (1.53 eV) were investigated in the 0.8 - 3.0 eV photon energy range. Aging induced changes in different spectral regions reveal the influence of difference mechanisms affecting the structure. One aging effect--the growth of the defect concentration within the optically active layers of the devices--is monitored. Conclusions on the microscopic nature of the changes are drawn and several applications are discussed.

© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Jens W. Tomm ; A. Baerwolff ; Christoph Lienau ; Alexander Richter ; A. Jaeger, et al.
"Monitoring the aging of high-power laser diode arrays", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, 2 (April 20, 1998); doi:10.1117/12.306188; http://dx.doi.org/10.1117/12.306188


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