Paper
1 March 1991 Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials
Markus Pessa, T. Hakkarainen, Jari Keskinen, Keijo Rakennus, Arto K. Salokatve, Guodong Zhang, Harry M. Asonen
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Abstract
This paper deals with growth of GaAs InP and their ternaries quaternaries and heterostructures by the gas-source molecular beam epitaxy (GSMBE) method. Epilayer qualities are discussed and compared with those obtained by other methods. Some problems related to growth of layers and interfaces are discussed in detail. Properties of lasers photodetectors and optical modulators fabricated by GSMBE are presented.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Markus Pessa, T. Hakkarainen, Jari Keskinen, Keijo Rakennus, Arto K. Salokatve, Guodong Zhang, and Harry M. Asonen "Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24378
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Cited by 3 scholarly publications.
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KEYWORDS
Molecular beam epitaxy

Optoelectronics

Gallium arsenide

Heterojunctions

Interfaces

Laser optics

Optical modulators

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