Study of GaAs/AlGaAs quantum-well structures grown by MOVPE using tertiarybutylarsine

Hyung G. Lee; HyungJun Kim; S. H. Park; Dietrich W. Langer

doi:10.1117/12.24311

1 March 1991 Study of GaAs/AlGaAs quantum-well structures grown by MOVPE using tertiarybutylarsine

Hyung G. Lee, HyungJun Kim, S. H. Park, Dietrich W. Langer

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24311
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Tertiarybutylarsine (TBAs) was utilized in the fabrication of GaAs A1GaAs and GaAs/A1GaAs structures in a Low Pressure - Metal Organic Vapor Phase Epitaxy (LP-MOVPE) system. Good quality epitaxial layers were achieved at 700 C with V/LI! ratio of 50. Undoped GaAs and AI (x 3-0. 6) layers were p-type with typical background carrier concentrations of mid 1014 cm3 and 1016 cm3 range respectively. Carbon could be used as p-type dopant in A1GaAS layers by controlling the TBAs mole fraction. Double-heterostructure lasers were fabricated and showed a threshold current density of 500 A/cm2. GaAs/AlGaAs multiple quantum well structures produced photoluminescence spectra with very narrow FWHM comparable to arsine-grown samples. Electro-absorptive waveguide modulator with MQW active layer demonstrated more than 2: 1 modulation ratio at the energy far below the QW exciton absorption peak. The deposition of 111-V compound semiconductors by metalorganic vapor phase epitaxy (MOVPE) is normally accomplished with gaseous group V precursors. These sources arsine (AsH3) and phosphine (PH3) are highly toxic and are stored in high pressure cylinders. Thus careful handlings are required to avoid accidental leakage. Lately a number of less hazardous arsenic compounds have been investigated as alternative As sources Methyl ethyl and butyl groups are substituted for one or more of the hydrogen atoms in arsine. In particular Tertiarybutylarsine (TBAs) has been most successful in growing high quality GaAs and A1GaAS films and useful electronic devices have

Citation Download Citation

Hyung G. Lee, HyungJun Kim, S. H. Park, and Dietrich W. Langer "Study of GaAs/AlGaAs quantum-well structures grown by MOVPE using tertiarybutylarsine", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24311

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