Integrated optical devices with silicon oxynitride prepared by plasma-enhanced chemical vapor deposition (PECVD) on Si and GaAs substrates

Dethard Peters; Joerg Mueller

doi:10.1117/12.24551

1 February 1991 Integrated optical devices with silicon oxynitride prepared by plasma-enhanced chemical vapor deposition (PECVD) on Si and GaAs substrates

Dethard Peters, Joerg Mueller

Author Affiliations +

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24551
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Plasma-enhanced chemical-vapor deposition (PECVD) is demonstrated as a technique for manufacturing silicon oxynitride thin films that permit the deposition of integrated optical components on Si and III/V-semiconductors. PECVD process parameters are optimized for a conventional parallel plate reactor using silane, nitrogen, and oxygen to yield homogeneous thicknesses and refractive indices across the wafer. The waveguide types utilized for the study are strip-loaded and trench-bulge waveguides, and the SiO(x)N(y) characteristics resulting from the optimized PECVD process include homogeneity and reproducibility. Optical components can be fashioned in this manner to produce directional couplers, dielectric mirrors, fiber coupling, and integrated detectors. The trench-bulge waveguides are found to provide the advantages of zero crosstalk to neighboring waveguides, scratch protection, and improved lateral confinement.

Citation Download Citation

Dethard Peters and Joerg Mueller "Integrated optical devices with silicon oxynitride prepared by plasma-enhanced chemical vapor deposition (PECVD) on Si and GaAs substrates", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24551

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