Paper
1 February 1991 InGaAs/GaAs interdigitated metal-semiconductor-metal (IMSM) photodetectors operational at 1.3 um grown by molecular beam epitaxy
Boris S. Elman, Jagannath Chirravuri, A. N. M. Masu Choudhury, Andrew Silletti, Andrew J. Negri, J. Powers
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24540
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The paper reports on InGaAs interdigitated metal-semiconductor-metal (IMSM) photodetectors operational at 13 micron fabricated on GaAs substrates. Different Schottky barrier enhancement cap layers were used in order to study the thermal stability and device performance characteristics. Dark current, dc responsivity, and high frequency response results are reported. Relationship between the responsivity and the cap structure is discussed. Using oxygen plasma passivation, photodetectors with low dark current and high frequency performance were obtained.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris S. Elman, Jagannath Chirravuri, A. N. M. Masu Choudhury, Andrew Silletti, Andrew J. Negri, and J. Powers "InGaAs/GaAs interdigitated metal-semiconductor-metal (IMSM) photodetectors operational at 1.3 um grown by molecular beam epitaxy", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24540
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KEYWORDS
Photodetectors

Gallium arsenide

Optoelectronic devices

Indium

Indium gallium arsenide

Metals

Oxygen

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