Paper
1 June 1994 Effect of zinc diffusion on the device performance of semi-insulating buried crescent lasers
Ching Long Jiang, Maria D. Ferreira, Robert J. Miller, Mark Mashas, Mark Soler, Keith Wilder, Eugene A. Imhoff, John D. Kulick, Randy Wilson
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Abstract
The effect of zinc diffusion on the device performance of semi-insulating buried crescent (SIBC) lasers was analyzed by electron beam induced current and scanning electron microscope techniques. A novel liquid phase epitaxy regrowth technique has been developed to minimize the zinc diffusion into the iron-doped semi-insulating indium phosphide blocking layer. This technique has been demonstrated to improve the device performance of SIBC lasers.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching Long Jiang, Maria D. Ferreira, Robert J. Miller, Mark Mashas, Mark Soler, Keith Wilder, Eugene A. Imhoff, John D. Kulick, and Randy Wilson "Effect of zinc diffusion on the device performance of semi-insulating buried crescent lasers", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176628
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KEYWORDS
Diffusion

Zinc

Semiconductor lasers

Cladding

Scanning electron microscopy

Iron

Laser development

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