Simulation of ion-enhanced dry-etch processes

Joachim Pelka

doi:10.1117/12.48902

1 March 1991 Simulation of ion-enhanced dry-etch processes

Joachim Pelka

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48902
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

A survey is given of the field of dry etch simulation. The state-of-the-art of sheath and profile simulation is discussed using the simulator ADEPT as an example. Different approaches for two-dimensional simulation are presented starting with simple rate models as known from SAMPLE. The use of more complex rate models by ADEPT is shown. The integration of surface process models into the two-dimensional profile simulation is demonstrated using an application of the generalized plasma etching model of Zawaideh. A new simulation approach is introduced based on the cell removal algorithm and Monte-Carlo methods. Surface process models are visualized and three-dimensional geometrical effects are demonstrated with this new approach.

Citation Download Citation

Joachim Pelka "Simulation of ion-enhanced dry-etch processes", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48902

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