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Proceedings Article

Real-time, in-situ measurement of film thickness and uniformity during plasma ashing of photoresist

[+] Author Affiliations
John T. Davies, Thomas E. Metz

Branson International Plasma Corp. (USA)

Richard N. Savage, Horace O. Simmons

SC Technology (USA)

Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, 551 (March 1, 1991); doi:10.1117/12.48948
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From Conference Volume 1392

  • Advanced Techniques for Integrated Circuit Processing
  • James A. Bondur; Terry R. Turner
  • Santa Clara, CA | September 15, 1990

abstract

This paper will discuss the performance ofequipment which monitors and so controls photoresist thickness and uniformity during plasma ashing without interfering with the process. Practical monitoring of a subtractive process of this type is significantly more complex than monitoring deposition processes. An initial absolute thickness measurement is needed. In addition the device must view the layer through a luminous medium and cannot rely on simple optical interference fringe counting. The equipment is self-calibrating and sensitive to layers dnm thick. An application to partial plasma resist ashing in high uniformity equipment will be described. Application to other films (e. g. oxide) will be discussed.

© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

John T. Davies ; Thomas E. Metz ; Richard N. Savage and Horace O. Simmons
"Real-time, in-situ measurement of film thickness and uniformity during plasma ashing of photoresist", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, 551 (March 1, 1991); doi:10.1117/12.48948; http://dx.doi.org/10.1117/12.48948


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