Long-wavelength lasers and detectors fabricated on InP/GaAs superheteroepitaxial wafer

Masao Aiga; Etsuji Omura

doi:10.1117/12.43806

1 July 1991 Long-wavelength lasers and detectors fabricated on InP/GaAs superheteroepitaxial wafer

Masao Aiga, Etsuji Omura

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43806
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

InGaAsP laser diodes and InGaAs photodiodes grown on GaAs substrates have been reviewed. The laser diodes exhibit low threshold current of 31 mA and high slope efficiency of 0.2 W/A which are comparable with the diodes grown on InP substrates. The InGaAs photodiodes also show the comparable characteristics with the photodiodes grown on InP substrates. A GaAs MESFET and an InGaAs photodiode have been monolithically integrated. This receiver OEIC has sensitivity of -28.1 dBm at transmission rate of 622 Mb/s with a bit error rate of 10-9.

Citation Download Citation

Masao Aiga and Etsuji Omura "Long-wavelength lasers and detectors fabricated on InP/GaAs superheteroepitaxial wafer", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43806

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