Electrode contacting on semiconductor radiation detectors has been a topic of active interest in many recent investigations. Research activities have focused on the morphology and chemistry of modified surfaces using sophisticated preparation techniques and employing characterization methods that are able to discriminate between surface and bulk effects. From an applied point of view, the detector fabrication technology involves a series of fabrication steps which can be optimized. Results of an ongoing effort to improve the performance of high resolution CdxZn1-xTe spectrometers by addressing wafer surface preparation, electrode deposition and contact passivation are described.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.