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Proceedings Article

Optical active gallium arsenide probes for scanning probe microscopy

[+] Author Affiliations
Sven Heisig

Univ. of Kassel (Japan)

W. Steffens, Egbert Oesterschulze

Univ. of Kassel (Germany)

Proc. SPIE 3467, Far- and Near-Field Optics: Physics and Information Processing, 305 (October 13, 1998); doi:10.1117/12.326832
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From Conference Volume 3467

  • Far- and Near-Field Optics: Physics and Information Processing
  • Suganda Jutamulia; Toshimitsu Asakura
  • San Diego, CA, USA | July 19, 1998

abstract

In order to produce microelectromechanical systems on base of gallium arsenide it is necessary to develop novel etching techniques. The conventional dip etching is not suitable to fabricate such systems reliably and with sufficiently small thickness variations. To overcome this problem we used a modified spray etching technique. A comparison between both methods is given.

© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Sven Heisig ; W. Steffens and Egbert Oesterschulze
"Optical active gallium arsenide probes for scanning probe microscopy", Proc. SPIE 3467, Far- and Near-Field Optics: Physics and Information Processing, 305 (October 13, 1998); doi:10.1117/12.326832; http://dx.doi.org/10.1117/12.326832


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