How to get light out of silicon: molecular design of precursors for MOCVD of Si:Er

William S. Rees Jr.; Oliver Just; Lionel C. Kimerling; Michael T. Morse

doi:10.1117/12.312904

6 July 1998 How to get light out of silicon: molecular design of precursors for MOCVD of Si:Er

William S. Rees Jr., Oliver Just, Lionel C. Kimerling, Michael T. Morse

Proceedings Volume 3469, Organic-Inorganic Hybrid Materials for Photonics; (1998) https://doi.org/10.1117/12.312904
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

Erbium {tris[bis(trimethylsilyl)]amide} has been employed as a dopant material for incorporation of the rare earth element erbium into a silicon host lattice for fabrication of monochromatic and temperature-independent optoelectronic devices. Electronic characteristics, including room temperature electroluminescence and glancing angle X-ray diffraction, have been obtained from deposited Si:Er films. The utilized erbium amide precursor has been compared to alternative erbium sources as hydrocarbon and fluorocarbon containing (beta) -diketonates (tmhd and fod).

Citation Download Citation

William S. Rees Jr., Oliver Just, Lionel C. Kimerling, and Michael T. Morse "How to get light out of silicon: molecular design of precursors for MOCVD of Si:Er", Proc. SPIE 3469, Organic-Inorganic Hybrid Materials for Photonics, (6 July 1998); https://doi.org/10.1117/12.312904

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