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Proceedings Article

How to get light out of silicon: molecular design of precursors for MOCVD of Si:Er

[+] Author Affiliations
William S. Rees, Jr., Oliver Just

Georgia Institute of Technology (USA)

Lionel C. Kimerling, Michael T. Morse

Massachusetts Institute of Technology (USA)

Proc. SPIE 3469, Organic-Inorganic Hybrid Materials for Photonics, 2 (July 6, 1998); doi:10.1117/12.312904
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From Conference Volume 3469

  • Organic-Inorganic Hybrid Materials for Photonics
  • Liliane G. Hubert-Pfalzgraf; S. Iraj Najafi
  • San Diego, CA, USA | July 19, 1998

abstract

Erbium {tris[bis(trimethylsilyl)]amide} has been employed as a dopant material for incorporation of the rare earth element erbium into a silicon host lattice for fabrication of monochromatic and temperature-independent optoelectronic devices. Electronic characteristics, including room temperature electroluminescence and glancing angle X-ray diffraction, have been obtained from deposited Si:Er films. The utilized erbium amide precursor has been compared to alternative erbium sources as hydrocarbon and fluorocarbon containing (beta) -diketonates (tmhd and fod).

© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

William S. Rees, Jr. ; Oliver Just ; Lionel C. Kimerling and Michael T. Morse
"How to get light out of silicon: molecular design of precursors for MOCVD of Si:Er", Proc. SPIE 3469, Organic-Inorganic Hybrid Materials for Photonics, 2 (July 6, 1998); doi:10.1117/12.312904; http://dx.doi.org/10.1117/12.312904


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