Paper
21 September 1998 Sensitivity of AsxSe100-x thin films for electron-beam irradiation
Nina Nordman, Olli Nordman, Nasser Peyghambarian
Author Affiliations +
Proceedings Volume 3482, International Optical Design Conference 1998; (1998) https://doi.org/10.1117/12.321982
Event: International Optical Design Conference, 1998, Kona, HI, United States
Abstract
Recently we have reported on the influence of the electron beam on As2S3 thin films. However, the sensitivity of the AsxSe100-x thin films with different compositions has not been investigated. Here we report on our measurement of the index change of AsxSe100-x thin films for the construction of the graded index optical components.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nina Nordman, Olli Nordman, and Nasser Peyghambarian "Sensitivity of AsxSe100-x thin films for electron-beam irradiation", Proc. SPIE 3482, International Optical Design Conference 1998, (21 September 1998); https://doi.org/10.1117/12.321982
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KEYWORDS
Thin films

Refractive index

Electron beams

Glasses

Selenium

Optical components

Phase shifts

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