New process for manufacturing thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing

Pierre Boher; Jean-Louis P. Stehle; Jean-Philippe Piel; Eric Fogarassy

doi:10.1117/12.323972

4 September 1998 New process for manufacturing thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing

Pierre Boher, Jean-Louis P. Stehle, Jean-Philippe Piel, Eric Fogarassy

Author Affiliations +

Proceedings Volume 3506, Microelectronic Device Technology II; (1998) https://doi.org/10.1117/12.323972
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Epitaxial Si_1-yC_y and Si_1-x-yGe_xC_y alloy layers are grown on monocrystalline silicon substrates by multiple energy ion implantation of Ge and C into single Si crystals followed by pulse excimer laser annealing. The properties of the alloy layers are determined precisely using spectroscopic ellipsometry (SE), x-ray diffraction (XRD) and Rutherford backscattering (RBS) techniques. We show that annealing energy densities higher than 2 J/cm² result in monocrystalline epitaxial layers with low quantity of defects. The lattice contraction due to the carbon inclusion increases with the implanted C concentration up to about 1.1%. For higher values a more complex behavior is observed with partial (or total) relaxation of the layer and/or carbide formation. With optimized condition, the growing of pseudomorphic epitaxial layers, from group IV semiconductor alloys was successful on large areas thanks to the high power excimer laser developed at SOPRA (1 J/cm² over 40 cm² in one pulse).

Citation Download Citation

Pierre Boher, Jean-Louis P. Stehle, Jean-Philippe Piel, and Eric Fogarassy "New process for manufacturing thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); https://doi.org/10.1117/12.323972

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