Iodine doping and MOCVD in-situ growth of HgCdTe p-on-n heterojunctions

Pradip Mitra; Thomas R. Schimert; Francine Cardillo Case; Y. L. Tyan; M. Kestigian; Richard D. Starr; Margaret H. Weiler; Marion B. Reine

doi:10.1117/12.179649

13 July 1994 Iodine doping and MOCVD in-situ growth of HgCdTe p-on-n heterojunctions

Pradip Mitra, Thomas R. Schimert, Francine Cardillo Case, Y. L. Tyan, M. Kestigian, Richard D. Starr, Margaret H. Weiler, Marion B. Reine

Author Affiliations +

Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179649
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

Recent developments in MOCVD growth of Hg_1-xCd_xTe photodiodes using the interdiffused multilayer process are reported. Iodine doping of HgCdTe is described using ethyl iodide. Using ethyl iodide, the iodine doping level can be controlled in the range of 7 X 10¹⁴ - 2 X 10¹⁸ cm^-3 without any memory effect. Activation of the iodine as a singly ionized donor is near 100% at concentrations < 1 X 10¹⁷ cm^-3. Ethyl iodide was not found to react with the other organometallic precursors and abrupt dopant profiles are obtained. The iodine doped HgCdTe films exhibit 80 K electron mobilities >= 1 X 10⁵ cm²/V-s, auger limited lifetimes of approximately 1 microsecond(s) for concentrations of (1-3)X10¹⁵ cm^-3, and x-values approximately 0.22. LWIR p-on-n heterojunctions have been grown in situ using iodine doping for the n-type absorber layer and arsenic doping for the p- type cap layer. Detailed characterization data for the photodiodes are reported.

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Pradip Mitra, Thomas R. Schimert, Francine Cardillo Case, Y. L. Tyan, M. Kestigian, Richard D. Starr, Margaret H. Weiler, and Marion B. Reine "Iodine doping and MOCVD in-situ growth of HgCdTe p-on-n heterojunctions", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179649

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