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13 July 1994 Principal strain tensor elements for (h,h,k)-oriented cubic crystals: an application to ZnSe-based heterostructures
Daniel Fang, D. N. Talwar, Nancy C. Giles
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Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179656
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States
Abstract
Strain parameters of thin films are needed to numerically simulate the optical gain of light amplification for semiconductor devices. We report a complete quantitative treatment of the stress-strain relations for several common (h,h,k) orientations. We find that earlier reports that attributed the presence of tensile elastic strain to both thermal and lattice-mismatches gave strain estimates that were too low. Using our calculations, we present a model to explain the observed shifts in excitonic recombination energies that have been reported by many groups to date.
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Daniel Fang, D. N. Talwar, and Nancy C. Giles "Principal strain tensor elements for (h,h,k)-oriented cubic crystals: an application to ZnSe-based heterostructures", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179656
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KEYWORDS
Crystals
Heterojunctions
Computer simulations
Optical simulations
Semiconductors
Thin film devices
Thin films
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