Paper
7 April 1999 1-kHz 5-W ArF excimer laser for microlithography with highly narrow 0.7-pm bandwidth and issues on durability related to optical damage
Tatsuo Enami, Takeshi Ohta, Hirokazu Tanaka, Hirokazu Kubo, Toru Suzuki, Fumika Sunaka, Katsutomo Terashima, Akira Sumitani, Youichi Kawasa, Osamu Wakabayashi, Hakaru Mizoguchi
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Abstract
We present the result of billion level durability test in the newest model of ArF excimer laser, KLES-G5A, for microlithography and durability issues relate to optical damage. The developed ArF laser achieves 5 W of output power with integrated energy stability less than +/- 0.3 percent at 1 kHz repetition rate. The spectral characteristic by FWHM of the deconvolved spectrum is less than 0.7 pm and the 95 percent energy of the total energy is within 2.0 pm band, which is designed to be suitable for partially achromatized refractive projection optics. Durability test of 1 billion pulses has already finished, and we have observed very slight changes in the performance. Prior to the durability test, irradiation examinations have been done. It demonstrates that CaF2 material has superior stability to SiO2 even as the high fluence DUV optical parts of line-narrowed ArF laser.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsuo Enami, Takeshi Ohta, Hirokazu Tanaka, Hirokazu Kubo, Toru Suzuki, Fumika Sunaka, Katsutomo Terashima, Akira Sumitani, Youichi Kawasa, Osamu Wakabayashi, and Hakaru Mizoguchi "1-kHz 5-W ArF excimer laser for microlithography with highly narrow 0.7-pm bandwidth and issues on durability related to optical damage", Proc. SPIE 3578, Laser-Induced Damage in Optical Materials: 1998, (7 April 1999); https://doi.org/10.1117/12.344436
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KEYWORDS
Excimer lasers

Luminescence

Laser stabilization

Crystals

Laser development

Optical lithography

Silica

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