Tessellated probe as an aid to process development

Neil M. P. Benjamin; K. R. Krieg; Gaylen T. Grover

doi:10.1117/12.56656

1 January 1992 Tessellated probe as an aid to process development

Neil M. P. Benjamin, K. R. Krieg, Gaylen T. Grover

Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56656
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

The tessellated probe is a large area single sided array of electrostatic probe elements arranged to simulate a wafer of 200mm diameter during processing within a plasma system. Various modes of operation are available including the standard negative DC bias for ion saturation measurements. Total ion flux and spatial distribution can be measured, giving two very useful parameters for process development. Measurements can also be made in the presence of simultaneously applied RF bias.

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Neil M. P. Benjamin, K. R. Krieg, and Gaylen T. Grover "Tessellated probe as an aid to process development", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); https://doi.org/10.1117/12.56656

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