TIS, AFM, interferometry, and optical profiler correlation of surface roughness on silicon wafers

Patrick A. Taylor; Dean J. Dawson

doi:10.1117/12.343707

29 March 1999 TIS, AFM, interferometry, and optical profiler correlation of surface roughness on silicon wafers

Patrick A. Taylor, Dean J. Dawson

Proceedings Volume 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays; (1999) https://doi.org/10.1117/12.343707
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Roughness on silicon wafers is becoming a critical surface parameter with the advent of improved semiconductor processes. Roughness levels in the order of 1 angstrom are routinely manufactured, challenging the limits of some micro-roughness measurement technologies. Additionally, measurement is moving from R&D and Q.A. areas into the manufacturing line placing more emphasis on speed of analysis, robustness, correlation and repeatability of the various techniques. This paper attempts to identify, review, and correlate suitable techniques for measurement at such low levels of micro- roughness. The strengths and weakness of each technique from a production viewpoint are also touched upon. Wafer roughness measurements were used to characterize a set of semiconductor wafers with a varying dopant and process characteristics. One hundred, 8' bare wafer samples with various dopants were prepared for measurements in the order of 1 angstrom to 2 angstrom. The samples were then measured with different methods using total integrated scatter (TIS), atomic force microscopy (AFM), interferometry (IF) and optical profilometers (OP). These techniques differ in many ways in their assessment of surface roughness and the results from each technique are presented and a discussion of the correlation issues between the different measurement systems is given.

Citation Download Citation

Patrick A. Taylor and Dean J. Dawson "TIS, AFM, interferometry, and optical profiler correlation of surface roughness on silicon wafers", Proc. SPIE 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays, (29 March 1999); https://doi.org/10.1117/12.343707

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available