Alignment-tolerant structures for ease of optoelectronic packaging

Mario Dagenais; Simarjeet S. Saini; Vijayanand Vusirikala; Robert E. Bartolo; Ralph D. Whaley Jr.; Z. Dilli; Y. Hu; Zhencan Frank Fan; F. G. Johnson; Paul H. Shen; Jagadeesh Pamulapati; Weimin Zhou; Dennis Stone

doi:10.1117/12.345423

14 April 1999 Alignment-tolerant structures for ease of optoelectronic packaging

Mario Dagenais, Simarjeet S. Saini, Vijayanand Vusirikala, Robert E. Bartolo, Ralph D. Whaley Jr., Z. Dilli, Y. Hu, Zhencan Frank Fan, F. G. Johnson, Paul H. Shen, Jagadeesh Pamulapati, Weimin Zhou, Dennis Stone

Author Affiliations +

Proceedings Volume 3626, Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV; (1999) https://doi.org/10.1117/12.345423
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Expanded mode alignment tolerant optical structures will play an important role in low-cost, large-scale packaging of optoelectronic devices. In this paper, we present two expanded mode structures for operation at 1.55 micrometers . Our devices use single epitaxial growth and conventional fabrication schemes. High butt-coupling efficiencies (> 40%) to a single mode fiber with relaxed alignment tolerances were achieved. The first of our devices uses adiabatic transformation over 500 micrometers . The second device uses resonant coupling over a much shorter region of 200 micrometers . The second scheme offers an interesting possibility for monolithic integration of active-passive components. We present the design and simulation results of such an integrated device.

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Mario Dagenais, Simarjeet S. Saini, Vijayanand Vusirikala, Robert E. Bartolo, Ralph D. Whaley Jr., Z. Dilli, Y. Hu, Zhencan Frank Fan, F. G. Johnson, Paul H. Shen, Jagadeesh Pamulapati, Weimin Zhou, and Dennis Stone "Alignment-tolerant structures for ease of optoelectronic packaging", Proc. SPIE 3626, Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV, (14 April 1999); https://doi.org/10.1117/12.345423

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