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Proceedings Article

Direct spectroscopic measurement of packaging-induced strains in high-power laser diode arrays

[+] Author Affiliations
Jens W. Tomm, A. Baerwolff, M. Neuner, Thomas Elsaesser

Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)

Ralf Mueller

Max-Born-Institut fuer Nichtlineare Optik (Germany)

Dirk Lorenzen, Franz X. Daiminger

Jenoptik Laserdiode GmbH (Germany)

A. Gerhardt, J. Donecker

Institut fuer Kristallzuechtung (Germany)

Proc. SPIE 3626, Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV, 138 (February 12, 1999); doi:10.1117/12.345424
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From Conference Volume 3626

  • Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV
  • Mahmoud Fallahi; Kurt J. Linden; S. C. Wang
  • San Jose, CA | January 23, 1999

abstract

High-power diode lasers such as `cm-bar arrays' are important for many applications. The `p-side down packaging', i.e. the direct mounting of the epitaxial layer sequence on a heat spreader ensures sufficient thermal properties, however, in such a geometry, additional mechanical strain of the active region represents a central issue, affecting both the laser parameter as well as lifetime and reliability of the device. Thermally induced strain caused by device packaging is studied in high-power semiconductor laser arrays by a novel non-invasive technique. Photocurrent measurements with intentionally strained laser array devices for 808 nm emission reveal spectral shifts of all allowed optical transitions in the active region. These shifts serve as a measure for strain and are compared with model calculations. Depending on the specific heat spreader materials we find compressive or tensile mounting induced strain contributions. For a given packaging architecture, about one quarter of the mounting induced strain is transferred to the quantum well region of the device. Spatially resolved measurements allow to measure lateral strain gradients in the devices. Using this data for calibration we show that polarization resolved electroluminescence scans can be used as convenient measure for strain homogeneity test also in quantum-well devices.

© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Jens W. Tomm ; Ralf Mueller ; A. Baerwolff ; M. Neuner ; Thomas Elsaesser, et al.
"Direct spectroscopic measurement of packaging-induced strains in high-power laser diode arrays", Proc. SPIE 3626, Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV, 138 (February 12, 1999); doi:10.1117/12.345424; http://dx.doi.org/10.1117/12.345424


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