UV Schottky-barrier detector development for possible Air Force applications

Gary A. Smith; Michael J. Estes; Joseph E. Van Nostrand; Tuoc Dang; P. J. Schreiber; Henryk Temkin; J. Hoelscher

doi:10.1117/12.344588

7 April 1999 UV Schottky-barrier detector development for possible Air Force applications

Gary A. Smith, Michael J. Estes, Joseph E. Van Nostrand, Tuoc Dang, P. J. Schreiber, Henryk Temkin, J. Hoelscher

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344588
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

This paper discusses the collaborative optical and electrical characterization of the first photovoltaic (PV) III-nitride based detectors grown and fabricated by the Air Force Research Laboratory (AFRL). These 2.6 micrometer thick, n-type GaN Schottky detector structures doped with Si were grown by molecular beam epitaxy (MBE) on (0001)-oriented sapphire substrates, and incorporated palladium (Pd) as the Schottky metal contact. Working Schottky-barrier detector sizes ranged from 50 micrometer to 1600 micrometer in diameter. Flood- illuminated spectral responsivities of these Schottky detectors were as high as 0.12 A/W (for a 1600 micrometer diameter device biased at -1.5 V) at a peak wavelength of 273 nm. The typical measured frequency response of these detectors was flat from dc to the chopper limit of 700 Hz, and the 1/e response time of a 1600 micrometer diameter Schottky- barrier GaN detector was found to be as low as 50 microsecond(s) at zero bias. Noise characterization of these detectors was also performed, and noise equivalent powers (NEPs) of sample GaN Schottky-barrier detectors are reported.

Citation Download Citation

Gary A. Smith, Michael J. Estes, Joseph E. Van Nostrand, Tuoc Dang, P. J. Schreiber, Henryk Temkin, and J. Hoelscher "UV Schottky-barrier detector development for possible Air Force applications", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344588

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