New phenomenon in ion/laser beam semiconductor microstructure fabrication: impact on reliability

Sergei Yurievich Sokolov

doi:10.1117/12.186933

14 September 1994 New phenomenon in ion/laser beam semiconductor microstructure fabrication: impact on reliability

Sergei Yurievich Sokolov

Proceedings Volume 2334, Microelectronics Manufacturability, Yield, and Reliability; (1994) https://doi.org/10.1117/12.186933
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

New giant-far-action lateral phenomenon (GFALP) in ion/laser beam semiconductor microstructure fabrication is observed to be the initial cause of defects mobility activation in microelectronic devices, device microstructures mutual influence and contamination of working areas of elements by defects of processing origin within a whole device crystal. The giant-far-action lateral phenomenon consists in point defects generation at local crystal surface modification by any means (for example: ion/laser beam or diamond incisor) and deep sideways penetration of defects (vacancies and interstitials) out into the initially clean material under the pressure of mechanical strains that occur at the boundary of the modified region. In case of high implantation dose (10¹⁶ ions/cm²), laser solid state diffuse doping, laser beam annealing of implanted semiconductor surface, or laser beam /mechanical scribing of wafer surface the scale of GFALP lateral effect exceeds 1 mm. Besides, at heavy implantation dose, point defects concentration exceeding 10¹⁸ defects/cm³, a phase transition of vacancy to dislocations in the gaseous phase of point defects was observed to occur with consequent dislocation sliding at a distance of more than 150 micron aside the boundary of the implanted zone.

Citation Download Citation

Sergei Yurievich Sokolov "New phenomenon in ion/laser beam semiconductor microstructure fabrication: impact on reliability", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186933

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