Effect of controlled vacancy injection by ion implantation on the intermixing of InGa/GaAs quantum wells

William P. Gillin; Kevin P. Homewood; Brian J. Sealy

doi:10.1117/12.636952

16 December 1992 Effect of controlled vacancy injection by ion implantation on the intermixing of InGa/GaAs quantum wells

William P. Gillin, Kevin P. Homewood, Brian J. Sealy

Author Affiliations +

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636952
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

- The diffusion coefficient of interdiffusion in InGaAs/GaAs strained quantum wells has been determined as a function of time following implantation with gallium arsenic and krypton ions. All implants were shown to produce some collisional mixing. Gallium implantation produced no enhancement of the intermixing over unimplanted samples whilst krypton implantation produced a factor oftwo increase in the interdiffusion. Arsenic implantation produced a two step diffusion mechanism with a fast initialdiffusion(20 times unimplanted)and a steady state region similar to that observed with krypton implants. I.

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William P. Gillin, Kevin P. Homewood, and Brian J. Sealy "Effect of controlled vacancy injection by ion implantation on the intermixing of InGa/GaAs quantum wells", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636952

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