Scanning tunneling microscope on homo-epitaxial, boron-doped diamond films

S. Szuba; W. J.P. van Enckevort; H. van Kempen

doi:10.1117/12.224978

16 October 1995 Scanning tunneling microscope on homo-epitaxial, boron-doped diamond films

S. Szuba, W. J.P. van Enckevort, H. van Kempen

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224978
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

In this paper the surfaces of {111}, {110}, and {100} homo-epitaxial layers of boron-doped diamond, grown by hot-filament assisted CVD, are examined by STM and optical microscopy. The STM results confirm the F- character of the {111} and {100} faces and the K-character of the {110} faces as was deduced from optical microscopy. However, only STM technique enables observation of individual nanometer scale steps, corrugations, and lattice imperfections arising during the diamond layers growth.

Citation Download Citation

S. Szuba, W. J.P. van Enckevort, and H. van Kempen "Scanning tunneling microscope on homo-epitaxial, boron-doped diamond films", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224978

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