Optical characterization of passivation for high-power AlxGa1-xAs-based lasers

Ivoil P. Koutzarov; Harry E. Ruda; Chandima D. Edirisinghe; Lech Z. Jedral; Qiang Liu; Alan H. Moore; Richard Henderson; Marcel G. Boudreau; Mohamed Boumerzoug; Peter Mascher

doi:10.1117/12.208458

28 April 1995 Optical characterization of passivation for high-power Al_xGa_1-xAs-based lasers

Ivoil P. Koutzarov, Harry E. Ruda, Chandima D. Edirisinghe, Lech Z. Jedral, Qiang Liu, Alan H. Moore, Richard Henderson, Marcel G. Boudreau, Mohamed Boumerzoug, Peter Mascher

Author Affiliations +

Proceedings Volume 2382, Laser Diodes and Applications; (1995) https://doi.org/10.1117/12.208458
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

We report on passivation of Al_xGa_1-xAs/GaAs surfaces using different sulfur and chlorine based treatments: These include ammonium sulfide solution, arsenic sulfide vapor and hydrochloric acid treatments. Enhancements in the intensity of near band-gap photoluminescence (PL) peaks, coupled with peak half-width reduction on treatment were attributed to a reduction in the density of surface states. Pre-etching using sulfuric acid- and ammonium hydroxide-based solutions prior to sulfur passivation was also found to contribute significantly to the overall success of a passivation treatment. The best sulfur-passivation results for all x (0 < x < 0.38) were found when sulfuric acid-peroxide-deionized water (Caros) solution pre-etching was followed by ammonium sulfide solution treatment at 65 degree(s)C for 25 min.

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Ivoil P. Koutzarov, Harry E. Ruda, Chandima D. Edirisinghe, Lech Z. Jedral, Qiang Liu, Alan H. Moore, Richard Henderson, Marcel G. Boudreau, Mohamed Boumerzoug, and Peter Mascher "Optical characterization of passivation for high-power Al_xGa_1-xAs-based lasers", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208458

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