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Proceedings Article

InGaAsSb/AlGaAsSb mid-infrared diode lasers for gas sensing

[+] Author Affiliations
Ramon U. Martinelli, Dmitri Z. Garbuzov, Hao Lee, Pamela K. York, Raymond J. Menna, John C. Connolly, S. Yegna Narayan

David Sarnoff Research Ctr. (USA)

Proc. SPIE 2382, Laser Diodes and Applications, 250 (April 28, 1995); doi:10.1117/12.208459
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From Conference Volume 2382

  • Laser Diodes and Applications
  • Kurt J. Linden; Prasad R. Akkapeddi
  • San Jose, CA, United States | February 01, 1995

abstract

Many simple molecules, such as H2O, CO2, CO, N2O, CH4, and HCN, have strong absorption bands at wavelengths between 2 and 3.5 micrometers . We are developing InGaAsSb/AlGaAsSb multi-quantum-well diode lasers operating from 2 to 3.5 micrometers as sources for trace-gas monitors. These devices are grown by molecular beam epitaxy, and they generally comprise four or five InGaAsSb quantum wells separated by AlGaAsSb barriers. The cladding layers are high-Al-content AlGaAsSb layers. Our longest-wavelength, room- temperature (20 degree(s)C) lasers operate at 2.78 micrometers in the pulsed mode, delivering 95 mW peak power. The highest temperature for pulsed-mode operation is 60 degree(s)C, at which the wavelength is 2.9 micrometers . Between 78 and 200 K they operate cw, and at 200 K the output is 3 mW at 2.66 micrometers in a dominant single mode. We discuss the properties of these lasers along with some initial applications to water-vapor detection.

© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Ramon U. Martinelli ; Dmitri Z. Garbuzov ; Hao Lee ; Pamela K. York ; Raymond J. Menna, et al.
"InGaAsSb/AlGaAsSb mid-infrared diode lasers for gas sensing", Proc. SPIE 2382, Laser Diodes and Applications, 250 (April 28, 1995); doi:10.1117/12.208459; http://dx.doi.org/10.1117/12.208459


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