Ultrafast internal thermalization of photoexcited carriers in polar semiconductors

Lucio Rota; Paolo Lugli; Thomas Elsaesser; Jagdeep Shah

doi:10.1117/12.137678

21 October 1992 Ultrafast internal thermalization of photoexcited carriers in polar semiconductors

Lucio Rota, Paolo Lugli, Thomas Elsaesser, Jagdeep Shah

Proceedings Volume 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors; (1992) https://doi.org/10.1117/12.137678
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We present a combined experimental and theoretical study of the ultrafast internal thermalization of high energy carriers created by laser excitation. Luminescence up-conversion is used to monitor the spectral and temporal evolution of the photoexcited carrier distributions with a time resolution of about 100 fs. A Monte Carlo simulation joined with a molecular dynamics approach is then used to interpret the experimental results. We show that the coulomb interaction among carriers is responsible for the initial ultrafast thermalization. The simulation allow us to distinguish between binary carrier-carrier collisions and plasmon losses and reconcile the results obtained with time resolved vs. c.w. hot (e, angstroms) luminescence.

Citation Download Citation

Lucio Rota, Paolo Lugli, Thomas Elsaesser, and Jagdeep Shah "Ultrafast internal thermalization of photoexcited carriers in polar semiconductors", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137678

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