Paper
8 April 1999 Time-resolved study of luminescence properties of porous silicon in micro- and nanosecond range
Zbigniew Lukasiak, Zbigniew Wyrzykowski, Jaroslaw Sylwisty, Waclaw Bala
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Abstract
Photoluminescence time resolved spectra (PL-TRS) and decay curves of photoluminescence (PL-DC) in micro- and nanosecond range at different temperatures (10 K-room) on anodically etched boron-doped silicon are presented. PL-TRS exhibit multiband structure and can be decomposed as a sum of few Gaussians. PL-DC have multiexponential shape. Relaxation times depend on wavelength of the observation. To explain our results we assumed model in which the multibarrier structure is formed by Si crystal (quantum well) surrounded by Si crystallites with diameters in the nanometer range (barrier region). The visible photoluminescence originates from radiative recombination between discrete energy levels in quantum well.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zbigniew Lukasiak, Zbigniew Wyrzykowski, Jaroslaw Sylwisty, and Waclaw Bala "Time-resolved study of luminescence properties of porous silicon in micro- and nanosecond range", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344715
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KEYWORDS
Silicon

Luminescence

Quantum wells

Crystals

Temperature metrology

Semiconducting wafers

Pulsed laser operation

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