Application of pulsed-laser-deposited amorphic diamond films in protective coatings and field-emission displays

Carl B. Collins Jr.; Farzin Davanloo; H. Park

doi:10.1117/12.206293

10 April 1995 Application of pulsed-laser-deposited amorphic diamond films in protective coatings and field-emission displays

Carl B. Collins Jr., Farzin Davanloo, H. Park

Author Affiliations +

Proceedings Volume 2403, Laser-Induced Thin Film Processing; (1995) https://doi.org/10.1117/12.206293
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Composed of sp³ bonded nodules of carbon, laser plasma films with the properties of diamond are deposited in vacuum onto almost any substrate by condensing carbon ions carrying keV energies. These multiply charged ions are obtained from the laser ablation of graphite at intensities in excess of 10¹¹ W cm^-2. The high energy of condensation provides both for the chemical bonding of such films to a wide variety of substrates and for low values of residual compressive stress, 0.6-0.8 GPa. On selected films hardness cannot be measured because of deformation of the diamond indenter and only a lower limit of 78 GPa can be reported. Coatings of 2-5 micrometers thicknesses have extended lifetimes of materials such as Si, Ti, ZnS, and stainless steel against the erosive wear from high-speed particles by factors to tens to thousands. The mechanical properties of amorphic diamond films are further enhanced by a low coefficient of friction of about 0.1. The combination of these mechanical properties seems to make amorphic diamond an attractive material for use as a protective coating in current industrial applications. Deposited upon silicon, quartz or sapphire, amorphic diamond films have interesting electrical properties including a very high coefficient of emissivity.

Citation Download Citation

Carl B. Collins Jr., Farzin Davanloo, and H. Park "Application of pulsed-laser-deposited amorphic diamond films in protective coatings and field-emission displays", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); https://doi.org/10.1117/12.206293

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